Nano Letters 2010, 10:2323–2329.CrossRef 22. Peng KQ, Huang ZP, Zhu J: Fabrication of large-area silicon nanowire p–n junction diode arrays. Adv Mater 2004, 16:73–76.CrossRef 23. Kato S, Watanabe Y, Kurokawa Y, Yamada A, Ohta Y, Niwa Y, Hirota M: Metal-assisted chemical etching using silica nanoparticle for the fabrication of a silicon nanowire array. Jpn J Appl Phys 2012, 51:02BP09–02BP09–4.CrossRef 24. Fang H, Li X, Song S, Xu Y, Zhu J: Fabrication of slantingly-aligned silicon nanowire arrays for solar cell applications. Nanotechnology 2008, 19:255703.CrossRef 25. Hui F, Li X, Song S, Xu Y, Zhu J: Fabrication of slantingly-aligned silicon nanowire arrays for solar cell applications.
Nanotechnology 2008, 19:255703.CrossRef 26. Schmidt J, Merkle A, Brendel R, Hoex B, BYL719 order van de Sanden MCM, Kessels
WMM: Surface passivation of high-efficiency silicon solar cells by atomic-layer-deposited Al 2 O 3 . Prog Photovoltaics 2008, 16:461–466.CrossRef 27. Agostinelli G, Delabie A, Vitanov P, Alexieva Z, Dekkers HFW, De Wolf Selleck AR-13324 S, Beaucarne G: Very low surface recombination velocities on p-type silicon wafers passivated with a dielectric with fixed negative charge. Sol Energ Mat Sol C 2006, 90:3438–3443.CrossRef 28. Poodt P, Lankhorst A, Roozeboom F, Spee K, Maas D, Vermeer A: High-speed spatial atomic-layer deposition of aluminum oxide layers for solar cell passivation. Adv Mater 2010, 22:3564.CrossRef 29. Saint-Cast P, Benick J, Kania D, Weiss L, Hofmann M, Rentsch J, Preu R, Glunz SW: High-efficiency c-Si solar cells passivated with ALD and PECVD aluminum oxide. IEEE Electr Device L 2010, 31:695–697.CrossRef 30.
Saint-Cast P, Kania D, Hofmann M, Benick J, Rentsch J, Preu R: Very low surface recombination velocity on p-type c-Si by high-rate plasma-deposited ifenprodil aluminum oxide. Appl Phys Lett 2009, 95:151502.CrossRef 31. Bowden S, Sinton RA: Determining lifetime in silicon blocks and wafers with accurate expressions for carrier density. J Appl Phys 2007., 102: 32. Bothe K, Krain R, Falster R, Sinton R: Determination of the bulk lifetime of bare multicrystalline silicon wafers. Prog Photovoltaics 2010, 18:204–208.CrossRef 33. Brody J, Rohatgi A, Yelundur V: Bulk resistivity optimization for low-bulk-lifetime silicon solar cells. Prog Photovoltaics 2001, 9:273–285.CrossRef 34. Matsuda A, Nomoto K, Takeuchi Y, Suzuki A, Yuuki A, Perrin J: Temperature-dependence of the sticking and loss probabilities of silyl radicals on hydrogenated amorphous-silicon. Surface Science 1990, 227:50–56.CrossRef 35. Matsuda A, Tanaka K: Investigation of the growth-kinetics of glow-disTemozolomide clinical trial charge hydrogenated amorphous-silicon using a radical separation technique. J Appl Phys 1986, 60:2351–2356.CrossRef 36. Dingemans G, van de Sanden MCM, Kessels WMM: Influence of the deposition temperature on the c-Si surface passivation by Al 2 O 3 films synthesized by ALD and PECVD.