8 wt % chromic acid (1:1 in volume) at 60°C for 3 h to remove the

8 wt.% chromic acid (1:1 in volume) at 60°C for 3 h to remove the alumina layer. In the second step, the sample was again anodized for 2 h under the same conditions and then, the underlying aluminum was removed in a CuCl2/HCl (13.5 g CuCl2 in 100 ml of 35% HCl) solution to expose the back-end AAO barrier. Finally, for pore widening, the sample was immersed in a 5.0 wt.% phosphoric acid solution at 30°C for 1 h. The scanning electron microscope (SEM) image of the fabricated porous AAO (sign with P-AAO) is present in Figure 1a. According the measurement result from the commercial software, the pore diameter and the pore spacing are approximately 302 ± 47 nm and

381 ± 52 nm, respectively. Figure 1 SEM images of P- AAO (a), W- AAO1 LY294002 clinical trial (b), partial enlargement of W- AAO1 (c), and W- AAO2 (d). To obtain the nanowire network AAOs, we required the manufacturer to add a film-eroding process after the pore-widening process. The P-AAOs were immersed again in mixed solution of 5.0 wt.% phosphoric acid and 1.8 wt.% chromic acid (1:1 in volume) at 60°C. The walls of the nanopores were damaged by the mixed acid solution, the nanopore structure fell down, and leaf-like nanowire cluster structure formed. Figure 1b shows the sample with a film-eroding time of 5 min, signed as W-AAO1. Figure 1c is the partial enlargement of W-AAO1, which show that the nanowire formed from the broken wall of nanopores. With further eroding,

the nanowires formed from walls of nanopores became longer and thinner and could no longer prop each other. Therefore, the nanowire HSP90 cluster fell down, and the nanowires lied on the surface selleck inhibitor as a uniform random layer. Figure 1d is the SEM image of the AAO with a film-eroding time of 10 min, called W-AAO2. The average diameter of nanowire on W-AAO1 and W-AAO2 was measured to be 68 ± 16 nm and 57 ± 15 nm, respectively. As shown in Figure 1b,d, dense junctions between the

nanowires exist in W-AAO1 and W-AAO2. Previous studies have certificated that great amount of sub-10-nm gaps exist in these nanowire network structures [39–41]. After depositing 50 nm of Au onto the surface of P-AAO, W-AAO1, and W-AAO2, large-area high-performance SERS substrates were fabricated and were assigned as P-AAO-Au, W-AAO1-Au, and W-AAO2-Au, respectively. Detail of SERS spectra measurement The measurement of SERS is same with our previous work [42]. Benzene thiol was used as the probe molecule. To ensure that a complete self-assembled monolayer (SAM) of benzene thiol was formed on the substrate surface, all of the SERS substrates were immersed in a 1 × 10-3 M solution of benzene thiol in ethanol for approximately 18 h and were subsequently rinsed with ethanol and dried in nitrogen [8, 42]. All the Raman spectra were measured with a confocal Raman spectroscopic system (model inVia, Renishaw Hong Kong Ltd., Kowloon Bay, Hong Kong, China). The spectrograph uses 1,200 g mm-1 gratings, a 785-nm laser and a scan type of SynchroScan. The incident laser power was set to be 0.

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